Navitas CTO Presents Leading GaN Power IC Innovations at Prestigious Power Electronics Event in Japan

Dan Kinzer, Navitas Co-Founder & Chief Technology Officer/Chief Operating Officer

I am extremely pleased and honored to address my long-time friends and colleagues in the ISPSD community about the exciting breakthroughs in GaN Power ICs and the promise they bring to revolutionize a broad range of power electronic applications.

Navitas Semiconductor today announced that Dan Kinzer, Co-Founder & Chief Technology Officer/Chief Operating Officer, will deliver a plenary address entitled “Developments in GaN Power ICs” at the 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD) The plenary opening session will be held at the Royton Sapporo Hotel in Sapporo, Japan on Monday morning, May 29, 2017.

Abstract: Gallium Nitride is an emerging technology that is enabling major advances in power electronics. Power integrated circuits are now emerging in the market and showing unprecedented efficiency, density, and system cost advantages. This paper reviews the beginnings of power integrated circuit techniques, leading to present implementations in advanced IC products, and forecasts future directions for the new technology.

ISPSD is the premier forum for technical discussion in all areas of power semiconductor devices and integrated circuits, their hybrid technologies, and applications.

“I am extremely pleased and honored to address my long-time friends and colleagues in the ISPSD community about the exciting breakthroughs in GaN Power ICs and the promise they bring to revolutionize a broad range of power electronic applications,” said Navitas CTO/COO, Dan Kinzer. “We are also delighted by the response of the power electronics industry to our GaN power IC’s innovations.”

Navitas established its…

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